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2N3019 Datasheet(PDF) 2 Page - Continental Device India Limited

Part # 2N3019
Description  NPN SILICON PLANAR EPITAXIAL TRANSISTORS
PDF  4 Pages
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

2N3019 Datasheet(HTML) 2 Page - Continental Device India Limited

  2N3019 Datasheet HTML 1Page - Continental Device India Limited 2N3019 Datasheet HTML 2Page - Continental Device India Limited 2N3019 Datasheet HTML 3Page - Continental Device India Limited 2N3019 Datasheet HTML 4Page - Continental Device India Limited  
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NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3019
2N3020
TO-39
Metal Can Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
MAX
UNITS
DC Current Gain
hFE*
IC=0.1mA,VCE=10V
2N3019
50
2N3020
30
100
hFE*
IC=10mA,VCE=10V
2N3019
90
2N3020
40
120
hFE*
IC=150mA,VCE=10V
2N3019
100
300
2N3020
40
120
hFE*
IC=500mA,VCE=10V
2N3019
50
2N3020
30
100
hFE*
IC=1A,VCE=10V
2N3019
15
2N3020
15
hFE*
IC=150mA,VCE=10V
2N3019
Tc= -55ºC
40
SMALL SIGNAL CHARACTERISTICS
Small Signal Current Gain
| hfe |
IC=1mA, VCE=5V, f=1KHz
2N3019
80
400
2N3020
30
200
Transition Frequency
fT
IC=50mA, VCE=10V
2N3019
f=20MHz
100
MHz
2N3020
80
MHz
Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
12
pF
Input Capacitance
Cib
VEB=0.5V, IC=0, f=1MHz
60
pF
Noise Figure
NF
IC=100µA, VCE=10V
2N3019
Rs=1KΩ,f=1KHz
4
dB
Collector Base Time Constant
rbb'cb'c
IC=10mA,VCB=10V, f=4MHz
400
ps
f=1MHz
*Pulse Test: Pulse Width <300
µµs, Duty Cycle <1.0%
Continental Device India Limited
Data Sheet
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