NPN SILICON PLANAR EPITAXIAL TRANSISTORS

2N3019

2N3020

TO-39

Metal Can Package

Designed for use in General Purpose Amplifier and High Speed Switching Applications

These Transistors are also Suitable for High Current Amplifier Applications

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNITS

Collector Emitter Voltage

80

V

Collector Base Voltage

140

V

Emitter Base Voltage

7

V

Collector Current

1

A

Power Dissipation @ Ta=25º C

800

mW

Power Dissipation@ Tc=25ºC

5

W

Junction Temperature

+200

ºC

Storage Temperature

-65 to +200

ºC

THERMAL RESISTANCE

Junction to Ambient

218.7

ºC/W

Junction to Case

35

ºC/W

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

MAX

UNITS

Collector Emitter Breakdown Voltage

80

V

Collector Base Breakdown Voltage

140

V

Emitter Base Breakdown Voltage

7

V

Collector Leakage Current

10

nΑ

10

µ

A

Emitter Leakage Current

10

nΑ

Collector Emitter Saturation Voltage

0.2

V

0.5

V

Base Emitter Saturation Voltage

1.1

V

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company