MJH11018 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN Darlington Power Transistor

JH11018

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 100mA, IB= 0

150

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 10A ,IB= 0.1A

2.5

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 15A ,IB= 0.15A

4.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 15A ,IB= 0.15A

3.8

VBE(on)

Base-Emitter On Voltage

IC= 10A ; VCE= 5V

2.8

ICEV

Collector Cutoff Current

VCEV=150V;VBE(off)=1.5V

VCEV=150V;VBE(off)=1.5V;TC=150℃

0.5

5.0

ICEO

Collector Cutoff Current

VCE= 75V, IB=0

IEBO

Emitter Cutoff Current

VEB= 5V; IC=0

hFE-1

DC Current Gain

IC= 10A ; VCE= -5V

400

15000

hFE-2

DC Current Gain

IC= 15A ; VCE= -5V

100

COB

Output Capacitance

IE= 0 ; VCB= 10V,f= 0.1MHz

400

Switching times

Delay Time

IC= 10A , VCC= 100V;

IB= 0.1A; VBE(off)= 5V;

Duty Cycle≤2.0%

150

Rise Time

1.2

Storage Time

4.4

Fall Time

2.5

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