BUL58D datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

Product Specification

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Silicon NPN Power Transistor

BUL58D

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

VCEO(sus)

Collector-Emitter Sustaining Voltage

IC= 100mA ; L= 25 mH

450

V(BR)EBO

Emitter-Base Breakdown Voltage

IEB= 10mA; IC=0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 4A; IB= 0.8A

1.5

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 5A; IB= 1 A

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 4A; IB= 0.8A

1.3

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 5A; IB= 1 A

1.5

ICES

Collector Cutoff Current

VCE= 800V; VBE = 0

Tj=125℃

200

500

ICEO

Collector Emitter Current

VCE= 450V; IB= 0

200

hFE-1

DC Current Gain

IC= 5A ; VCE= 5V

hFE-2

DC Current Gain

IC= 0.5A ; VCE= 5V

Diode Forward Voltage

IF= 3A

3.0

Switching Times

Storage Time

IC = 2 A ,IB1 = 0.4 A

VBE(off) = -5 V, RBB = 0 Ω

VCL = 250 V, L = 200 mH

1.8

μs

Fall Time

180

Storage Time

IC = 2 A; IB1 = 0.4 A

VBE(off) = -5 V;RBB = 0Ω

VCL = 250 V; L = 200 mH

Tj = 125℃

1.5

μs

Fall Time

180

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