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BUL58D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BUL58D
Description  Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUL58D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
Silicon NPN Power Transistor
BUL58D
DESCRIPTION
·High Voltage Capability
·High Speed Switching
·Integrated Antiparallel Collector-Emitter Diode
APPLICATIONS
·Electronic ballasts for fluorescent lighting
·Electronic transformers for halogen lamps
·Switch mode power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage
800
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current
8
A
ICM
Collector Peak Current
16
A
IB
Base Current
4
A
IBM
Base Peak Current
8
A
PC
Collector Power Dissipation
@TC=25℃
85
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.47
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
62.5
℃/W


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