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DS481 Datasheet(PDF) 2 Page - Texas Instruments

Part # DS481
Description  Low Power RS-485/RS-422 Multipoint Transceiver with Sleep Mode
PDF  17 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
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DS481 Datasheet(HTML) 2 Page - Texas Instruments

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DS481
SNLS131B – JULY 2000 – REVISED MARCH 2013
www.ti.com
Table 1. Pin Descriptions
Pin Name
Number
DESCRIPTION
Receiver Output: When RE (Receiver Enable) is LOW, the receiver is enabled (ON), if DO/RI
RO
1
≥ DO (1)/RI (1) by 200 mV, RO will be HIGH. If DO/RI ≤ DO (1)/RI (1) by 200 mV, RO will be
LOW. Additionally RO will be HIGH for OPEN (Non-terminated) Inputs.
Receiver Output Enable: When RE (1) is LOW the receiver output is enabled. When RE (1) is
RE (1)
2
HIGH, the receiver output is in TRI-STATE (OFF). When RE (1) is HIGH and DE is LOW, the
device will enter a low-current sleep mode after 600 ns.
Driver Output Enable: When DE is HIGH, the driver outputs are enabled. When DE is LOW,
DE
3
the driver outputs are in TRI-STATE (OFF). When RE (1) is HIGH and DE is LOW, the device
will enter a low-current sleep mode after 600 ns.
Driver Input: When DE (Driver Enable) is HIGH, the driver is enabled, if DI is LOW, then
DI
4
DO/RI will be LOW and DO (1)/RI (1) will be HIGH. If DI is HIGH, then DO/RI is HIGH and
DO (1)/RI (1) is LOW.
GND
5
Ground Connection.
DO/RI
6
Driver Output/Receiver Input, 485 Bus Pin.
DO (1)
7
Driver Output/Receiver Input, 485 Bus Pin.
/RI (1)
Positive Power Supply Connection: Recommended operating range for VCC is +4.75V to
VCC
8
+5.25V.
(1)
Non Terminated, Open Input only
Truth Table
DRIVER SECTION
RE (1)
DE
DI
A
B
X(2)
H
H
H
L
X(2)
H
L
L
H
X(2)
L
X(2)
Z(2)
Z(2) (3)
RECEIVER SECTION
RE (1)
DE
A-B
RO
L
L
≥+0.2V
H
L
L
≤−0.2V
L
H
X(2)
X(2)
Z (2)(3)
L
L
OPEN (1)
H
(1)
Non Terminated, Open Input only
(2)
X = indeterminate
Z = TRI-STATE
(3)
Device enters sleep mode if enable conditions are held > 600 ns, DE = L and RE = H. RE is Non Terminated and Open Input only.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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Copyright © 2000–2013, Texas Instruments Incorporated
Product Folder Links: DS481



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