DMP6023LSS datasheet(2/6 Pages) DIODES

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DMP6023LSS

Document number: DS37198 Rev. 2 - 2

2 of 6

www.diodes.com

January 2015

DMP6023LSS

Maximum Ratings (@TA = +25°C unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

-60

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = -10V

TA = +25°C

TA = +70°C

-6.6

-5.3

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

IDM

-50

Maximum Continuous Body Diode Forward Current (Note 6)

-1.8

Avalanche Current, L = 0.1mH

IAS

-35.5

Avalanche Energy, L = 0.1mH

EAS

62.9

Thermal Characteristics (@TA = +25°C unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

1.2

Thermal Resistance, Junction to Ambient (Note 5)

RJA

100

°C/W

Total Power Dissipation (Note 6)

1.6

Thermal Resistance, Junction to Ambient (Note 6)

RJA

°C/W

Thermal Resistance, Junction to Case (Note 6)

RJC

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (TA = +25°C unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

-60

—

VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

-1

µA

VDS = -60V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(th)

-1

—

-3

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance

RDS (ON)

—

VGS = -10V, ID = -5A

—

VGS = -4.5V, ID = -4A

Diode Forward Voltage

VSD

—

-0.7

-1.2

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

2569

—

VDS = -30V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

179

—

Reverse Transfer Capacitance

Crss

—

143

—

Gate Resistance

—

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = -4.5V,)

—

26.5

—

VDS = -30V, ID = -5A

Total Gate Charge (VGS = -10V),

—

53.1

—

Gate-Source Charge

Qgs

—

7.1

—

Gate-Drain Charge

Qgd

—

12.6

—

Turn-On Delay Time

tD(on)

—

VGS = -10V, VDS = -30V,

RG = 3Ω, ID = -5A

Turn-On Rise Time

—

7.1

—

Turn-Off Delay Time

tD(off)

—

110

—

Turn-Off Fall Time

—

Body Diode Reverse Recovery Time

trr

—



—



IF = -5A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

Qrr

—



—



Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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