DMP6023LSS

Document number: DS37198 Rev. 2 - 2

4 of 6

www.diodes.com

January 2015

© Diodes Incorporated

DMP6023LSS

T , JUNCTION TEMPERATURE ( C)

J



Figure 7 On-Resistance Variation with Temperature

0

0.005

0.01

0.015

0.02

0.025

0.03

0.035

0.04

0.045

0.05

-50

-25

0

25

50

75

100

125

150

V

= -4.5V

GS

I = -5A

D

V

= -10V

GS

I

= -10A

D

T , JUNCTION TEMPERATURE (°C)

J

Figure 8 Gate Threshold Variation vs. Ambient Temperature

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

-50

-25

0

25

50

75

100

125

150

I = -1mA

D

I

= -250µA

D

Q , TOTAL GATE CHARGE (nC)

g

Figure 11 Gate-Charge Characteristics

0

1

2

3

4

5

6

7

8

9

10

0

5

10

15

20

25

30

35

40

45

50

55

V

= -30V

DS

I = -5A

D

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 12 SOA, Safe Operation Area

0.01

0.1

1

10

100

0.1

1

10

100

Limited

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

T

= 150°C

J (m ax )

T = 25°C

A

V

=10V

GS

Single Pulse

DUT on 1 * MRP Board

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

0

5

10

15

20

25

30

0

0.3

0.6

0.9

1.2

1.5

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

100

1000

10000

0

5

10

15

20

25

30

35

40

C

iss

C

oss

C

rss

f = 1MHz