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DS20005509A-page 1

2N6660

Features

• Free from secondary breakdown

• Low power drive requirement

• Ease of paralleling

• Excellent thermal stability

• Integral source-drain diode

• High input impedance and high gain

Applications

• Motor controls

•Converters

• Amplifiers

• Switches

• Power supply circuits

• Drivers: relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.

Description

2N6660 is an enhancement-mode (normally-off) tran-

sistor that utilizes a vertical DMOS structure and a well-

proven silicon-gate manufacturing process. This com-

bination produces a device with the power-handling

capabilities of bipolar transistors, and the high input

impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS struc-

tures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very-

low threshold voltage, high breakdown voltage, high-

input impedance, low-input capacitance, and fast

switching speeds are desired.

Package Types

TO-39

See Table 2-1 for pin information

Case: Drain

GATE

SOURCE

DRAIN

N-Channel, Enhancement-Mode, Vertical DMOS FET