MAC12 datasheet(2/6 Pages) ONSEMI

2 / 6 page

MAC12SM, MAC12SN

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance -

Junction to Case

Junction to Ambient

RqJC

RqJA

2.2

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes 1/8

″ from Case for 10 Seconds

260

°C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open)

TJ = 25°C

TJ = 110°C

IDRM,

IRRM

0.01

2.0

ON CHARACTERISTICS

Peak On-State Voltage(1)

(ITM = ± 17 A)

VTM

1.85

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)

MT2(+), G(+)

MT2(+), G(-)

MT2(-), G(-)

IGT

1.5

2.5

2.7

5.0

Holding Current

(VD = 12 V, Gate Open, Initiating Current = ±200 mA)

2.5

Latching Current (VD = 12 V, IG = 5 mA)

MT2(+), G(+)

MT2(+), G(-)

MT2(-), G(-)

3.0

5.0

3.0

Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)

MT2(+), G(+)

MT2(+), G(-)

MT2(-), G(-)

VGT

0.45

0.68

0.62

0.67

1.5

DYNAMIC CHARACTERISTICS

Critical Rate of Change of Commutating Current

(VD = 400 V, ITM = 3.5 A, Commutating dV/dt = 10 V/ms, Gate Open,

TJ = 110°C, f = 500 Hz, Snubber: Cs = 0.01 mf, Rs = 15 W)

(di/dt)c

8.0

A/ms

Critical Rate of Rise of Off-State Voltage

(VD = 67% VDRM, Exponential Waveform, RGK = 1 KW,

TJ = 110°C)

dV/dt

Repetitive Critical Rate of Rise of On-State Current

IPK = 50 A; PW = 40

msec; diG/dt = 1 A/msec; Igt = 100 mA;

f = 60 Hz

di/dt

2. Pulse Test: Pulse Width

≤ 2.0 ms, Duty Cycle ≤ 2%.

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