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BUV48BFI Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BUV48BFI
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUV48BFI Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUV48BFI Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUV48BFI Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
2
isc Silicon NPN Power Transistor
BUV48BFI
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; IB= 0
600
V
VCER(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.5A; L= 2mH; Vclamp= 1200V
RBE= 10Ω
1200
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 6A; IB= 1.5A
1.5
V
VCE (sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 4A
3.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 6A; IB= 1.5A
1.5
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 10A; IB= 4A
2.0
V
ICER
Collector Cutoff Current
VCE= 1200V; RBE= 10Ω
VCE= 1200V; RBE= 10Ω; TC=125℃
0.5
4.0
mA
ICES
Collector Cutoff Current
VCE= 1200V; VBE= 0
VCE= 1200V; VBE= 0; TC=125℃
0.5
3.0
mA
ICEO
Collector Cutoff Current
VCE= 600V; IB= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
1.0
mA
Switching times Resistive Load
ton
Turn-on Time
IC= 6A; IB1=-IB2= 1.5A; VCC= 250V
1.0
μs
ts
Storage Time
3.0
μs
tf
Fall Time
0.7
μs



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