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BUV48BFI Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BUV48BFI
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUV48BFI Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUV48BFI Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUV48BFI Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Power Transistor
BUV48BFI
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 600V (Min)
·High Current Capability
·Fast Switching Speed
APPLICATIONS
·Designed for switching and industrial applications from
single and three-phase mains.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCER
Collector-Emitter Voltage
(RBE= 10Ω)
1200
V
VCES
Collector-Emitter Voltage
(VBE= 0)
1200
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak tp< 5ms
30
A
IB
Base Current-Continuous
4
A
IBM
Base Current-peak tp< 5ms
20
A
PC
Collector Power Dissipation
@TC=25℃
65
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.92
℃/W


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