1

3

2

10.2± 0.2

φ 3.8± 0.15

PIN

0.9± 0.1

2.5± 0.1

2.6± 0.2

0.5± 0.1

1.4± 0.2

4.5± 0.2

PIN 1

PIN 3

CASE

PIN 2

Positive CT

FEATURES

MECHANICAL DATA

Position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

am bient tem perature unless otherwise specified.

UNITS

Maximum recurrent peak reverse voltage

V

Maximum RMS Voltage

V

Maximum DC blocking voltage

V

Maximum average forw ard

total device

per leg

A

Peak forw ard surge current 8.3ms single half

A

Maximum forw ard

voltage per leg

)

(NOTE 1)

Maximum reverse current

@T

at rated DC blocking voltage

@T

Maximum thermal resistance per leg

/W

Operating junction temperature range

Storage temperature range

2. 2.0

3. Thermal resistance f rom junction to cas

e.

m A

1

0

1

20

56

63

70

MBR

1

0100CT

80

90

100

VOLTAGE RANGE: 80 - 100 V

CURRENT: 10 A

Metal silicon junction, m ajority carrier conduction.

Case:JEDEC TO-220AB,m olded plastic body

DUAL SCHOTTKY RECTIFIERS

High current capacity, low forward voltage drop.

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

-

55 ---- + 150

-

55 ---- + 150

Term inals:Solderable per MIL-STD-750,

1 1

Method 2026

0.1

4.4

TO-220AB

MBR1080CT---MBR10100CT

MBR

MBR

1080CT

1090CT

Guard ring for over voltage protection.

High surge capacity.

For use in low voltage, high frequency inverters, free

Polarity: As m arked

Weight: 0.071 ounce, 2.006 gram s

6.0

V

0.75

0.85

Dimensions in millimeters

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

80

90

100

5.0

Diode Semiconductor Korea

www.diode.kr