FEATURES

Metal-Semiconductor junction with guard ring

Epitaxial construction

Low forward voltage drop,low s witching losses

High s urge capability

MECHANICAL DATA

Case:JEDEC TO--220AC,molded plastic

Terminals: Leads solderable per

MIL- STD-750,Method 2026

Polarity: As marked

Weight:

0.064 ounces,1.81 gram

Mounting position: Any

Ratings at 25

am bient tem perature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

S

F82

S

F83

S

F84

S

F85

S

F86

UNITS

Maximum recurrent peak reverse voltage

100

15

0

2

00

3

00

4

00

V

Maximum RMS voltage

70

105

14

0

210

28

0

V

Maximum DC blocking voltage

1

00

150

2

00

3

00

4

00

V

Maximum average forw ard rectified current

Peak forw ard surge current

8.3ms single half -sine-w ave

superimposed on rated load

Maximum reverse current

@T

at rated DC blocking voltage

@T

Typical thermal resistance

(Note 2)

/W

Operating junction temperature range

T

J

Storage temperature range

-55 ---- + 150

Maximum instantaneous forw ard voltage

@ 8.0A

10

500

V

1.0

1.35

1

25

50

S

F81

35

50

8.0

2.Thermal resistance junction to case.

µ A

NOTE: 1. Measured at 1MHz and applied reverse voltage of 4.0 volts.

A

3.0

- 55 ---- +150

SF81 --- SF86

A

For use in low voltage,high frequency inverters free

ULTRA FAST RECTIFIERS

VOLTAGE RANGE: 50 --- 400 V

CURRENT: 8.0A

TO - 220AC

The plastic material carries U/L recognition 94V-

O

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

ｍｍ

Maximum reverse recovery time

(Note 3)

35

50

ns

Typical junction capacitance (Note 1)

C

J

50

30

PF

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