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BSH112 Datasheet(PDF) 8 Page - NXP Semiconductors |
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BSH112 Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 13 page ![]() Philips Semiconductors BSH112 N-channel enhancement mode field-effect transistor Product specification Rev. 01 — 25 August 2000 8 of 13 9397 750 07305 © Philips Electronics N.V. 2000. All rights reserved. Tj =25 °C and 150 °C; VGS =0V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. 03aa45 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD (V) IS (A) Tj = 25 oC 150oC VGS = 0 V |
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