Philips Semiconductors

BSH112

N-channel enhancement mode field-effect transistor

Product specification

Rev. 01 — 25 August 2000

2 of 13

9397 750 07305

© Philips Electronics N.V. 2000. All rights reserved.

5.

Quick reference data

6.

Limiting values

Table 2:

Quick reference data

Symbol Parameter

Conditions

Typ

Max

Unit

drain-source voltage (DC)

−

60

V

drain current (DC)

−

300

mA

total power dissipation

−

0.83

W

junction temperature

−

150

°C

drain-source on-state resistance

2.8

5

Ω

3.8

5.3

Ω

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

drain-source voltage (DC)

−

60

V

drain-gate voltage (DC)

60

V

gate-source voltage (DC)

−±15

V

drain current (DC)

Figure 2 and 3

−

300

mA

−

190

mA

peak drain current

Figure 3

−

1.2

A

total power dissipation

−

0.83

W

storage temperature

−65

+150

°C

operating junction temperature

−65

+150

°C

Source-drain diode

source (diode forward) current (DC)

−

300

mA

peak source (diode forward) current

−

1.2

A