 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IRF3000 Datasheet(PDF) 2 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
IRF3000 Datasheet(HTML) 2 Page - International Rectifier |
|
|
2 / 8 page  IRF3000 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 2.0 ––– ––– SVDS = 50V, ID = 0.96A Qg Total Gate Charge ––– 22 33 ID = 0.96A Qgs Gate-to-Source Charge ––– 4.7 7.1 nC VDS = 240V Qgd Gate-to-Drain ("Miller") Charge ––– 11 17 VGS = 10V, td(on) Turn-On Delay Time ––– 8.2 ––– VDD = 150V tr Rise Time ––– 7.2 ––– ID = 0.96A td(off) Turn-Off Delay Time ––– 23 ––– RG = 2.2Ω tf Fall Time ––– 23 ––– VGS = 10V Ciss Input Capacitance ––– 730 ––– VGS = 0V Coss Output Capacitance ––– 100 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 20 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 940 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 39 ––– VGS = 0V, VDS = 240V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 87 ––– VGS = 0V, VDS = 0V to 240V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 47 mJ IAR Avalanche Current ––– 1.9 A Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 0.96A, VGS = 0V trr Reverse Recovery Time ––– 86 130 ns TJ = 25°C, IF = 0.96A Qrr Reverse RecoveryCharge ––– 250 380 nC di/dt = 100A/µs Diode Characteristics 1.6 13 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 300 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.38 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 0.34 0.40 Ω VGS = 10V, ID = 0.96A VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 300V, VGS = 0V ––– ––– 250 VDS = 240V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V IGSS IDSS Drain-to-Source Leakage Current |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
