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B360L Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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B360L Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 2 page  7.0± 0.3 1.5± 0.3 8.1± 0.3 0.25± 0.06 FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified Maximum recurrent peak reverse voltage VRRM V Maximum RMS voltage V RWS V Maximum DC blocking voltage VDC V Maximum average forw ord rectified current at x T L(SEE FIG.1) I(AV) A Peak forw ard surge current 8.3ms single half- x sine-w ave superimposed on rated load(JEDEC x Method) I FSM A Maximum instantaneous forw ard voltage at x 3.0A(NOTE.1) V F V Maximum DC reverse current @TA=25 ℃ Operating junction temperature range TJ oC Storage temperature range T STG oC 2.5 I R NOTE: 1.Pulse test:300 S pulse width,1%duty cy cle Typical thermal resitance (NOTE. 2) oC/W mA -55---+150 -55---+150 10 B360L 2. Thermal resitance junction to lead. REVERSE VOLTAGE: 60 V CURRENT: 3.0 A Built-in strain relief Case: NSMC,molded plastic over 1111passivated chip SCHOTTKY BARRIER RECTIFIER Low power loss,high efficiency Plastic package has Underwriters Laboratory 111 Flammability Classification 94V-0 High temperature soldering guaranteed:250 oC/10 111 seconds at terminals Polarity: Color band denotes cathode end Weight: Terminals:Solder plated, solderable per MIL-STD-750, 1111Method 2026 80 3.0 UNITS 60 60 42 Guardring for overvoltage protection Low profile package For surface mounted applications Metal silicon junction, majority carrier conduction High surge capability For use in low voltage high frequency inverters,free 111 wheeling and polarity protection applications at rated DC blocking voltage @TA=100 ℃ NSMC RθJL 0.58 24 B360L Dimensions in millimeters Diode Semiconductor Korea www.diode.kr |
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