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D882 Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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D882 Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 4 page ![]() NPN Silicon Epitaxial Planar Transistor D882 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 6 V Collector cut-off current ICBO VCB=40V,IE=0 1 μA Collector cut-off current ICEO VCE=30V,IB=0 1 μA Emitter cut-off current IEBO VEB=3V,IC=0 1 μA DC current gain hFE VCE=2V,IC=20mA VCE=2V,IC=1A 30 60 150 160 400 Collector-emitter saturation voltage VCE(sat) IC=2A, IB= 0.2A 0.3 0.5 V Base-emitter saturation voltage VBE(sat) IC=2A, IB=0.2A 1.0 2.0 V Transition frequency fT VCE=5V, IC= 0.1A 90 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 45 pF CLASSIFICATION OF hFE Rank R Q P E Range 60-120 100-200 160-320 200-400 www.diode.kr Diode Semiconductor Korea |
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