MS23P19Z datasheet(2/6 Pages) BWTECH

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MS23P19Z

20V P-Channel MOSFETs

Publication Order Number: [MS23P19Z]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Tc=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

-20

VGS

Gate-Source Voltage

±8

Drain Current -Continuous (TC=25°C)

-250

Drain Current -Continuous (TC=100°C)

-160

IDM

Drain Current Pulsed

-1.0

Power Dissipation (TC=25°C)

155

Power Dissipation –Derate above 25°C

1.25

mW/°C

Storage Temperature Range

-55 to 150

°C

TSTG

Operating Junction Temperature Range

-55 to 150

°C

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

RθJA

Thermal Resistance Junction to ambient

800

°C/W

Electrical Characteristics (TJ=25°C, unless otherwise noted)

On Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS

Gate Threshold Voltage

VDS = VGS , ID = 250μA

-0.3

-0.7

-1.0

VGS(th) Temperature Coefficient

mV/°C

RDS(ON)

Static Drain-Source On-Resistance

VGS = -4.5 V , ID = -0.2 A

500

650

VGS = -2.5 V , ID = -0.15 A

700

900

VGS = -1.8 V , ID = -0.1 A

1100

1400

VGS = -1.5 V , ID = -0.1 A

1700

2300

Off Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V , ID=250μA

-20

△BV

DSS

△T

BVDSS Temperature Coefficient

ID = -1mA , Referenced to 25°C

-0.01

V/°C

IDSS

Drain-Source Leakage Current

VDS = -20 V , VGS = 0 V, TJ = 125°C

VDS = -16 V , VGS = 0 V , TJ = 125°C

-1

-10

IGSS

Gate-Source Leakage Current

VGS = ±8 V , VDS = 0 V

±20

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