MS23P19Z datasheet(3/6 Pages) BWTECH

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MS23P19Z

20V P-Channel MOSFETs

Publication Order Number: [MS23P19Z]

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Total Gate Charge

2,3

VDS = -10 V,ID = -0.2 A,

VGS = -4.5 V

Qgs

Gate-Source Charge

2,3

0.28

0.5

Qgd

Gate-Drain Charge

2,3

0.18

0.4

Td(on)

Turn-On Time

2,3

VDD = -10 V, ID = -0.2 A,

RG = 10 Ω , VGS = -4.5 V

Turn-On Time

2,3

5.2

Td(off)

Turn-Off Delay Time

2,3

Turn-Off Fall Time

2,3

CISS

Input Capacitance

VDS = -10 V, VGS = 0 V,

F = 1.0MHz

COSS

Output Capacitance

CRSS

Reverse Transfer Capacitance

6.5

Drain-Source Diode Characteristics and Maximum Ratings

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Continuous Source Current

VG=VD=0V , Force Current

-0.25

ISM

Pulsed Source Current

-0.5

VSD

Diode Forward Voltage

IS = -0.2 A , VGS = 0 V, TJ = 125°C

-1

Notes;

1. Repetitive Rating : Pulsed width limited by maximum junction temperature.

2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

3. Essentially independent of operating temperature.

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