www.irf.com

1

6/11/03

IRF6604

Notes

 through ‡ are on page 11

Description

to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm

profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly

equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling

to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6604 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc-

tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power

the latest generation of processors operating at higher frequencies. The IRF6604 has been optimized for parameters that

are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Techniques

Absolute Maximum Ratings

Parameter

Units

Drain-to-Source Voltage

V

Gate-to-Source Voltage

A

Pulsed Drain Current

c

Power Dissipation

g

Power Dissipation

g

W

Power Dissipation

Linear Derating Factor

W/°C

Operating Junction and

°C

Storage Temperature Range

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Ambient

f

–––

55

Junction-to-Ambient

g

12.5

–––

Junction-to-Ambient

h

20

–––

°C/W

Junction-to-Case

i

–––

3.0

Junction-to-PCB Mounted

1.0

–––

-40 to + 150

2.3

0.018

1.5

42

Max.

12

9.2

92

±12

30

49

Qg

30V

11.5m

Ω@V

17nC

13m

Ω@V

DirectFET

™ ISOMETRIC

PD - 94365B