IRLR3410 datasheet(2/10 Pages) IRF

2 / 10 page

IRLR/U3410

www.irf.com

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

100

–––

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

–––

0.122 –––

V/°C

Reference to 25°C, ID = 1mA

–––

––– 0.105

VGS = 10V, ID = 10A

–––

––– 0.125

VGS = 5.0V, ID = 10A

–––

––– 0.155

VGS = 4.0V, ID = 9.0A

VGS(th)

Gate Threshold Voltage

1.0

–––

2.0

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

7.7

–––

VDS = 25V, ID = 9.0A

–––

µA

VDS = 100V, VGS = 0V

–––

250

VDS = 80V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage

–––

100

VGS = 16V

Gate-to-Source Reverse Leakage

–––

-100

VGS = -16V

Total Gate Charge

–––

ID = 9.0A

Qgs

Gate-to-Source Charge

–––

4.8

VDS = 80V

Qgd

Gate-to-Drain ("Miller") Charge

–––

VGS = 5.0V, See Fig. 6 and 13

td(on)

Turn-On Delay Time

–––

7.2

–––

VDD = 50V

Rise Time

–––

ID = 9.0A

td(off)

Turn-Off Delay Time

–––

RG = 6.0Ω, VGS = 5.0V

Fall Time

–––

RD = 5.5Ω, See Fig. 10

Between lead,

6mm (0.25in.)

from package

and center of die contact

Ciss

Input Capacitance

–––

800

–––

VGS = 0V

Coss

Output Capacitance

–––

160

–––

VDS = 25V

Crss

Reverse Transfer Capacitance

–––

ƒ = 1.0MHz, See Fig. 5

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

Internal Source Inductance

–––

7.5

–––

RDS(on)

Static Drain-to-Source On-Resistance

Internal Drain Inductance

–––

4.5

–––

IDSS

Drain-to-Source Leakage Current

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

–––

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

–––

p-n junction diode.

VSD

Diode Forward Voltage

–––

1.3

TJ = 25°C, IS = 9.0A, VGS = 0V

trr

Reverse Recovery Time

–––

140

210

TJ = 25°C, IF =9.0A

Qrr

Reverse RecoveryCharge

–––

740 1100

di/dt = 100A/µs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

Notes:

VDD = 25V, starting TJ = 25°C, L = 3.1mH

RG = 25Ω, IAS = 9.0A. (See Figure 12)

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

SD ≤ 9.0A, di/dt ≤ 540A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

This is applied for I-PAK, LS of D-PAK is measured between lead and

center of die contact

Uses IRL530N data and test conditions

Pulse width ≤ 300µs; duty cycle ≤ 2%

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