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PCF8833 Datasheet(PDF) 92 Page - NXP Semiconductors

Part # PCF8833
Description  STN RGB - 132 X 132 X 3 driver
PDF  112 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PCF8833 Datasheet(HTML) 92 Page - NXP Semiconductors

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2003 Feb 14
92
Philips Semiconductors
Objective specification
STN RGB - 132
× 132 × 3 driver
PCF8833
15.9
Programming specification
For programming OTP cells, the VOTP(gate) and VOTP(drain) voltages have to be applied as indicated in Fig.57. Voltages
VOTP(gate) and VOTP(drain) can be applied at the same time or can have a staggered sequence as indicated by cases
a and b of Fig.57.
Depending on the series resistance in the supply wires, up to 16 OTP bits can be programmed at the same time. Each
OTP cell can only be programmed once.
Table 98 Programming specification (see Fig.57)
Note
1. The voltage drop across the ITO track and any connector must be taken into account to guarantee a sufficiently high
voltage at the chip pins.
SYMBOL
PARAMETER
CONDITION
MIN.
TYP.
MAX.
UNIT
VOTP(gate)
voltage applied to VOTP(gate) pin
relative to VSS1
programming active;
note 1
tbf
8
tbf
V
programming inactive
tbf
0
tbf
V
VOTP(drain)
voltage applied to VOTP(drain) pin
relative to VSS1
programming active;
note 1
tbf
8
tbf
V
programming inactive
tbf
0
tbf
V
IOTP(gate)
current drawn by VOTP(gate) during
programming
tbf
100
tbf
µA
IOTP(drain)
current drawn by VOTP(drain) during
programming
per programmed OTP
cell
tbf
500
tbf
µA
Tamb(prog)
ambient temperature during
programming
025
40
°C
tOPESU
set-up time of OPE as a function of
VOTP(gate) and VOTP(drain)
VOTP(gate) and
VOTP(drain) > 0 V
1
−−
ms
tOPEHD
hold time of OPE as a function of
VOTP(gate) and VOTP(drain)
VOTP(gate) and
VOTP(drain) > 0 V
1
−−
ms
tWRITEPW
pulse width of programming voltage
45
50
55
ms



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