DMT3003LFG

Document number: DS37819 Rev. 2 - 2

2 of 7

www.diodes.com

June 2016

© Diodes Incorporated

DMT3003LFG

Characteristic

Symbol

Value

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

100

90

A

22

18

A

Maximum Continuous Body Diode Forward Current (Note 5)

3

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

100

A

Avalanche Current, L=1mH

16

A

Avalanche Energy, L=1mH

250

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

2.4

W

Thermal Resistance, Junction to Ambient (Note 5)

52

°C/W

Total Power Dissipation (Note 5)

62

W

Thermal Resistance, Junction to Case (Note 6)

2

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

30

—

—

V

Zero Gate Voltage Drain Current

—

—

1

μA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

1

—

3

V

Static Drain-Source On-Resistance

—

2.4

3.2

m

Ω

—

4

5.5

Diode Forward Voltage

—

0.75

1

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

2,370

—

pF

f = 1MHz

Output Capacitance

—

1,360

—

Reverse Transfer Capacitance

—

240

—

Gate Resistance

—

0.6

—

Ω

—

20

—

nC

—

44

—

Gate-Source Charge

—

7

—

Gate-Drain Charge

—

8

—

Turn-On Delay Time

—

6.2

—

ns

Turn-On Rise Time

—

4.3

—

Turn-Off Delay Time

—

21

—

Turn-Off Fall Time

—

8

—

Bodyy Diode Reverse Recovery Time

—

25

—

ns

Body Diode Reverse Recovery Charge

—

37

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.