TPS65010RGZ datasheet(7/50 Pages) TI

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(2)

(PRECHG) +

KSET

(SET_PRECHG)

(ISET)

(3)

(TAPER) +

KSET

(SET_TAPER)

(ISET)

(4)

(TERM) +

KSET

(SET_TERM)

(ISET)

TPS65010

SLVS149A – JUNE 2003 – REVISED JANUARY 2004

ELECTRICAL CHARACTERISTICS (continued)

Battery Charger, V

O(REG) + V(DO-MAX) ≤ V(CHG) = V(AC) or V(USB), I(TERM) < IO≤ 1 A, 0°C < TA< 85°C

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

PRECHARGE CURRENT REGULATION, SHORT-CIRCUIT CURRENT, AND BATTERY DETECTION CURRENT

Precharge to fast-charge transition threshold,

V(LOWV)

V(CHG)min ≥ 4.5V

2.8

3.0

3.2

voltage on VBAT pin.

V(CHG)min ≥ 4.5 V, VI(OUT) decreasing

Deglitch time

below threshold; 100-ns fall time,

250

375

500

10-mV overdrive

I(PRECHG)

Precharge current (2)

≤ V

I(OUT) < V(LOWV), t < t(PRECHG)

100

I(DETECT)

Battery detection current

200

µA

V(SET-PRECHG)

Voltage at ISET pin

≤ V

I(OUT) < V(LOWV), t < t(PRECHG)

240

255

270

CHARGE TAPER AND TERMINATION DETECTION

I(TAPER)

Taper current detect range (3)

VI(OUT) > V(RCH), t < t(TAPER)

100

V(SET_TAPER)

Voltage at ISET pin for charge TAPER detection

VI(OUT) > V(RCH), t < t(TAPER)

235

250

265

Voltage at ISET pin for charger termination

V(SET_TERM)

VI(OUT) > V(RCH)

detection(4)

V(CHG)min ≥ 4.5V, charging current

increasing or decreasing above and

Deglitch time for I(TAPER)

250

375

500

below; 100-ns fall time, 10-mV

overdrive

V(CHG)min ≥ 4.5 V, charging current

Deglitch time for I(TERM)

decreasing below;100-ns fall time,

250

375

500

10-mV overdrive

TEMPERATURE COMPARATOR

V(LTF)

Low (cold) temperature threshold

2.475

2.50

2.525

V(HTF)

High (hot) temperature threshold

0.485

0.5

0.515

I(TS)

TS current source

102

110

µA

Deglitch time for temperature fault

250

375

500

BATTERY RECHARGE THRESHOLD

VO(REG)

V(RCH)

Recharge threshold

V(CHG)min≥ 4.5 V

-0.115

-0.1

-0.085

V(CHG)min ≥ 4.5 V, VI(OUT) decreasing

Deglitch time

below threshold; 100 ns fall time,

250

375

500

10 mV overdrive

TIMERS

t(PRECHG)

Precharge timer

V(CHG)min ≥ 4.5 V

1500

1800

2160

sec

t(TAPER)

Taper timer

V(CHG)min≥ 4.5 V

1500

1800

2160

sec

t(CHG)

Charge timer

V(CHG)min≥ 4.5 V

15000

18000

21600

sec

SLEEP AND STANDBY

V(CHG) ≤

V(SLP-ENTRY)

Sleep-mode entry threshold, PG output = high

2.3 V

≤ V

I(OUT) ≤ VO(REG)

VI(OUT)

+150 mV

V(CHG) ≥

V(SLP_EXIT)

Sleep-mode exit threshold,PG output = low

2.3 V

≤ V

I(OUT) ≤ VO(REG)

VI(OUT)+19

0 mV

AC or USB decreasing below

Deglitch time for sleep mode entry and exit

threshold; 100-ns fall time, 10-mV

200

375

500

overdrive

Delay between valid USB voltage being applied and

t(USB_DEL)

375

start of charging process from USB

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