BF1203 datasheet(13/20 Pages) PHILIPS

13 / 20 page

2001 Apr 25

Philips Semiconductors

Product speciﬁcation

Dual N-channel dual gate MOS-FET

BF1203

handbook, halfpage

050

IG1 (µA)

(mA)

MCD956

Fig.23 Drain current as a function of gate 1 current;

typical values.

Amplifier b

VDS = 5 V; VG2-S =4V.

Tj =25 °C.

handbook, halfpage

VGG (V)

MCD957

(mA)

Fig.24 Drain current as a function of gate 1 supply

voltage (= VGG); typical values.

Amplifier b

VDS = 5 V; VG2-S = 4 V; Tj =25 °C.

RG1 = 120 kΩ (connected to VGG); see Fig.35.

handbook, halfpage

024

VGG = VDS (V)

(mA)

MCD958

RG1 = 68 kΩ

82 k

Ω

100 k

Ω

120 k

Ω

150 k

Ω

220 k

Ω

180 k

Ω

Fig.25 Drain current as a function of gate 1 (= VGG)

and drain supply voltage; typical values.

Amplifier b

VG2-S = 4 V; Tj =25 °C.

RG1 connected to VGG; see Fig.35.

handbook, halfpage

MCD959

VG2-S (V)

(mA)

4.5 V

4 V

3 V

VGG = 5 V

3.5 V

Amplifier b

VDS = 5 V; Tj =25 °C.

RG1 = 120 kΩ (connected to VGG); see Fig.35.

Fig.26 Drain current as a function of gate 2

voltage; typical values.

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