2001 Apr 25

2

Philips Semiconductors

Product specification

Dual N-channel dual gate MOS-FET

BF1203

FEATURES

• Two low noise gain controlled amplifiers in a single

package

• Superior cross-modulation performance during AGC

• High forward transfer admittance

• High forward transfer admittance to input capacitance

ratio.

APPLICATIONS

• Gain controlled low noise amplifiers for VHF and UHF

applications with 3 to 9 V supply voltage, such as digital

and analog television tuners and professional

communications equipment.

DESCRIPTION

The BF1203 is a combination of two different dual gate

MOS-FET amplifiers with shared source and gate 2 leads.

The source and substrate are interconnected.

Internal bias circuits enable DC stabilization and a very

good cross-modulation performance during AGC.

Integrated diodes between the gates and source protect

against excessive input voltage surges. The transistor is

encapsulated in a SOT363 micro-miniature plastic

package.

PINNING - SOT363

PIN

DESCRIPTION

1

gate 1 (a)

2

gate 2

3

drain (a)

4

drain (b)

5

source

6

gate 1 (b)

handbook, halfpage

MBL254

Top view

13

2

4

5

6

AMP

a

AMP

b

d (a)

s

d (b)

g1 (a)

g2

g1 (b)

Fig.1 Simplified outline and symbol.

Marking code: L2-

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per MOS-FET unless otherwise specified

drain-source voltage

−−

10

V

drain current (DC)

−−

30

mA

y

forward transfer admittance

232835mS

253040mS

input capacitance at gate 1

−

2.6

3.1

pF

−

1.7

2.2

pF

reverse transfer capacitance

f = 1 MHz

−

15

−

fF

NF

noise figure

−

1

1.8

dB

−

1.1

1.8

dB

cross-modulation

amp. a: input level for k = 1% at 40 dB AGC

105

−−

dB

µV

amp. b: input level for k = 1% at 40 dB AGC

100

105

−

dB

µV

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.