Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

0.1

1

10

100

1000

0.00001

0.0001

0.001

0.01

0.1

1

10

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

1

2

J

DM

thJA

A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

1

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 13. Typical On-Resistance Vs.

Drain Current

Fig 12. Typical On-Resistance Vs.

Gate Voltage

0

1020

3040

-ID , Drain Current ( A )

0.00

0.05

0.10

0.15

0.20

VGS = -4.5V

VGS = -2.5V

VGS = -1.8V

Fig 14. Typical Threshold Voltage Vs.

Junction Temperature

-75

-50

-25

0

25

50

75

100 125 150

TJ , Temperature ( °C )

0.3

0.4

0.5

0.6

0.7

0.8

ID = -250µA

1.0

2.0

3.0

4.0

5.0

6.0

7.0

-VGS, Gate -to -Source Voltage ( V )

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.10

Id = -4.3A

Page:P4 -P4

Plastic-Encapsulate Mosfets

GUANGDONG

HOTTECH

INDUSTRIAL

CO., LTD.

IRLML6401