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IRLML6401 Datasheet(PDF) 3 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

Part # IRLML6401
Description  Power MOSFET
PDF  4 Pages
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Manufacturer  HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]
Direct Link  http://www.hottech.net.cn/
Logo HOTTECH - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

IRLML6401 Datasheet(HTML) 3 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

  IRLML6401 Datasheet HTML 1Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. IRLML6401 Datasheet HTML 2Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. IRLML6401 Datasheet HTML 3Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. IRLML6401 Datasheet HTML 4Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.  
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
1000
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
-V
, Drain-to-Source Voltage (V)
DS
10us
100us
1ms
10ms
1
10
100
VDS, Drain-to-Source Voltage (V)
0
200
400
600
800
1000
1200
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds+ Cgd
0.1
1
10
100
0.2
0.6
1.0
1.4
1.8
-V
,Source-to-Drain Voltage (V)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0
4
8
12
16
0
2
4
6
8
10
Q , Total Gate Charge (nC)
G
I =
D
-4.3A
V
=-10V
DS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
5.0
T , Case Temperature ( C)
°
C
25
50
75
100
125
150
0
20
40
60
80
Starting T , Junction Temperature ( C)
J
°
ID
TOP
BOTTOM
-1.9A
-3.4A
-4.3A
Page:P4 -P3
Plastic-Encapsulate Mosfets
GUANGDONG
HOTTECH
INDUSTRIAL
CO., LTD.
IRLML6401



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