DMN1019USN datasheet(2/6 Pages) DIODES

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DMN1019USN

Document number: DS36999 Rev. 2 - 2

2 of 6

www.diodes.com

May 2014

DMN1019USN

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±8

Continuous Drain Current (Note 6) VGS = 4.5V

Steady

State

TA = +25°C

TA = +70°C

9.3

7.4

t<10s

TA = +25°C

TA = +70°C

8.8

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

IDM

Maximum Body Diode Forward Current (Note 6)

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

0.68

TA = +70°C

0.4

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

RθJA

160

°C/W

t<10s

115

°C/W

Total Power Dissipation (Note 6)

TA = +25°C

1.2

TA = +70°C

0.83

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

RθJA

°C/W

t<10s

°C/W

Thermal Resistance, Junction to Case (Note 6)

RθJC

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS

—

µA

VDS =12V, VGS = 0V

Gate-Body Leakage

IGSS

—

±2

µA

VGS = ±8V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(th)

0.35

0.53

0.8

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

mΩ

VGS = 4.5V, ID = 9.7A

—

VGS = 2.5V, ID = 9A

—

VGS = 1.8V, ID = 8.1A

—

VGS = 1.5V, ID = 4.5A

—

VGS = 1.2V, ID = 2.4A

Forward Transfer Admittance

IYfsI

—

VDS = 4V, ID = 9.7A

Diode Forward Voltage

VSD

—

0.8

1.2

VGS = 0V, IS = 10A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

2426

—

VDS = 10V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

396

—

Reverse Transfer Capacitance

Crss

—

375

—

Gate Resistance

—

1.1

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 8V)

—

50.6

—

VDS = 4V, ID = 10A

Total Gate Charge (VGS = 4.5V)

—

27.3

—

Gate-Source Charge

Qgs

—

3.4

—

Gate-Drain Charge

Qgd

—

5.2

—

Turn-On Delay Time

tD(ON)

—

7.6

—

VDD = 4V, VGEN = 5V, ID = 10A,

RG = 1Ω, RL = 0.4Ω

Turn-Off Delay Time

tD(OFF)

—

22.2

—

Turn-On Rise Time

—

57.6

—

Turn-Off Fall Time

—

16.8

—

Notes:

5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation PD is based on t<10s RθJA.

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. The power dissipation PD is based on t<10s RθJA.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

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