TLP759(IGM)

2003-02-19

2

· Option (D4) type

VDE approved: DIN VDE0884 / 06.92,

(Note 1) When a VDE0884 approved type is needed,

please designate the “Option (D4)”

· Structural parameter

7.62mm pich TLP759 (IGM)

Creepage distance: 7.0mm (min.)

Clearance: 7.0mm (min.)

Insulation thickness: 0.4mm (min.)

Characteristic

Symbol

Rating

Unit

Forward current

(Note 2)

25

mA

Pulse forward current

(Note 3)

50

mA

Peak transient forward current

(Note 4)

1

A

Reverse voltage

5

V

Diode power dissipation

(Note 5)

45

mW

Output current

8

mA

Peak output current

16

mA

Output voltage

-0.5~20

V

supply voltage

-0.5~30

V

Output power dissipation

(Note 6)

100

mW

Operating temperature range

-55~100

°C

Storage temperature range

-55~125

°C

Lead solder temperature(10s)

(Note 7)

260

°C

Isolation voltage(AC,1min.,R.H.≤60%,Ta=25°C)

(Note 8)

5000

(Note 2): Derate 0.8mA above 70°C.

(Note 3): 50% duty cycle,1ms pulse width.

Derate 1.6mA / °C above 70°C.

(Note 4): Pulse width PW ≤ 1µs,300pps.

(Note 5): Derate 0.9mW / °C above 70°C.

(Note 6): Derate 2mW / °C above 70°C.

(Note 7): Soldering portion of lead: Up to 2mm from the body of the device.

(Note 8): Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together and

pins 5, 6, 7 and 8 shorted together.