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TPS2377D Datasheet(PDF) 3 Page - Texas Instruments

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Part # TPS2377D
Description  IEEE 802.3af PoE POWERED DEVICE CONTROLLERS
PDF  21 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TPS2377D Datasheet(HTML) 3 Page - Texas Instruments

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RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
TPS2375
TPS2376
TPS2377
SLVS525A – APRIL 2004 – REVISED SEPTEMBER 2004
MIN
MAX
UNIT
VDD, PG, RTN
0
57
V
Input voltage range
UVLO
0
5
V
Operating current range (sinking)
RTN
0
350
mA
Classification resistor(1)
CLASS
255
4420
Ω
R(ILIM) Inrush limit program resistor (1)
62.5
500
k
Ω
Sinking current
PG
0
2
mA
TJ
Operating junction temperature
-40
125
°C
TA
Operating free–air temperature
-40
85
°C
(1)
Voltage should not beexternally applied to CLASS and ILIM.
V
(VDD) = 48 V, R(DET) = 24.9 kΩ, R(CLASS) = 255 Ω, R(ILIM) = 178 kΩ, and –40°C ≤ TJ≤ 125°C, unless otherwise noted. Positive
currents are into pins. V
(UVLO) = 0 V for classification and V(UVLO) = 5 V otherwise for the TPS2376. Typical values are at 25°C.
All voltages are with respect to VSS unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
DETECTION
DET open, V(VDD) = V(RTN) = 1.9 V, measure
Offset current
0.3
3
µA
I(VDD) + I(RTN)
DET open, V(VDD) = V(RTN) = 10.1 V, measure
Sleep current
4
12
µA
I(VDD) + I(RTN)
DET leakage current
V(DET) = V(VDD) = 57 V, measure I(DET)
0.1
5
µA
V(RTN) = V(VDD),
V(VDD) = 1.4 V
53.7
56
58.3
µA
R(DET) = 24.9 kΩ,
Detection current
measure I(VDD) + I(RTN) +
V(VDD) = 10.1 V
395
410
417
µA
I(DET)
CLASSIFICATION
R(CLASS) = 4420 Ω, 13 ≤ V(VDD)≤ 21 V
2.2
2.4
2.8
R(CLASS) = 953 Ω, 13 ≤ V(VDD)≤ 21 V
10.3
10.6
11.3
I(CLASS)
Classification current(1)
R(CLASS) = 549 Ω, 13 ≤ V(VDD)≤ 21 V
17.7
18.3
19.5
mA
R(CLASS) = 357 Ω, 13 ≤ V(VDD)≤ 21 V
27.1
28.0
29.5
R(CLASS) = 255 Ω, 13 ≤ V(VDD)≤ 21 V
38.0
39.4
41.2
V(CL_ON)
Classification lower threshold
Regulator turns on, V(VDD) rising
10.2
11.3
13.0
V
V(CU_OFF)
Regulator turns off, V(VDD) rising
21
21.9
23
V
Classification upper threshold
V(CU_H)
Hysteresis(2)
0.5
0.78
1
V
Leakage current
V(CLASS) = 0 V, V(VDD) = 57 V
1
µA
PASS DEVICE
rDS(on)
On resistance
I(RTN) = 300 mA
0.58
1.0
Ω
V(VDD) = V(RTN) = 30 V,
15
Leakage current
µA
V(UVLO) = 0 V (TPS2376)
Current limit
V(RTN) = 1 V
405
461
515
mA
I(LIM)
Inrush limit
V(RTN) = 2 V, R(ILIM) = 178 kΩ
100
130
180
mA
V(RTN) falling, R(ILIM) = 178 kΩ, inrush
85%
91%
100%
Inrush current termination (3)
state
→normal operation
R(ILIM) = 69.8 kΩ, V(RTN-VSS) = 5 V,
15
25
Current rise time into inrush (2)
I(RTN) = 30 mA→300 mA, V(VDD) increasing
µs
past upper UVLO
Apply load
∞Ω→20 Ω, time measured to
2
2.5
Current limit response time(2)
µs
I(RTN) = 45 mA
Leakage current, ILIM
V(VDD) = 15 V, V(UVLO) = 0 V
1
µA
(1)
Classification is tested withexact resistor values. A 1% tolerance classification resistor assurescompliance with IEEE 802.3af limits.
(2)
Not tested inproduction.
(3)
This parameter specifies theRTN current value, as a percentage of the steady state inrush current, belowwhich it must fall to make PG
assert (open-drain).
3



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