4

ISO124

SBOS074D – SEPTEMBER 1997 – REVISED JULY 2016

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Copyright © 1997–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage

±18

V

100

V

Continuous isolation voltage

1500

Vrms

Junction temperature

125

°C

Output short to common

Continuous

–40

125

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±1000

V

Charged-device model (CDM), per JEDEC specification JESD22-

±500

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

–25

85

°C

±15

V

±15

V

±10

V

(1)

For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

7.4 Thermal Information

ISO124

UNIT

DVA (SOIC)

NVF (SOIC)

16 PINS

28 PINS

Junction-to-ambient thermal resistance

79.8

51.0

°C/W

Junction-to-case (top) thermal resistance

32.9

32.4

°C/W

Junction-to-board thermal resistance

42.2

29.5

°C/W

Junction-to-top characterization parameter

6.6

10.4

°C/W

Junction-to-board characterization parameter

40.9

29.0

°C/W