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LM4666 Datasheet(PDF) 11 Page - National Semiconductor (TI) |
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LM4666 Datasheet(HTML) 11 Page - National Semiconductor (TI) |
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11 / 15 page ![]() Application Information (Continued) typical value. Increased THD may also be observed with voltages less than V DD on the Shutdown pin when in PLAY mode. The LM4666 has an internal resistor connected between GND and Shutdown pins. The purpose of this resistor is to eliminate any unwanted state changes when the Shutdown pin is floating. The LM4666 will enter the shutdown state when the Shutdown pin is left floating or if not floating, when the shutdown voltage has crossed the threshold. To mini- mize the supply current while in the shutdown state, the Shutdown pin should be driven to GND or left floating. If the Shutdown pin is not driven to GND, the amount of additional resistor current due to the internal shutdown resistor can be found by Equation (1) below. (V SD - GND) / 60k Ω (1) With only a 0.5V difference, an additional 8.3µA of current will be drawn while in the shutdown state. GAIN SELECTION FUNCTION The LM4666 has fixed selectable gain to minimize external components, increase flexibility and simplify design. For a differential gain of 6dB, the Gain Select pin should be per- manently connected to V DD or driven to a logic high level. For a differential gain of 12dB, the Gain Select pin should be permanently connected to GND or driven to a logic low level. The gain of the LM4666 can be switched while the amplifier is in PLAY mode driving a load with a signal without damage to the IC. The voltage on the Gain Select pin should be switched quickly between GND (logic low) and V DD (logic high) to eliminate any possible audible artifacts from appear- ing at the output. For typical threshold voltages for the Gain Select function, refer to the Gain Threshold Voltages graph in the Typical Performance Characteristics section. www.national.com 11 |
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