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MIC2193 Datasheet(PDF) 8 Page - Micrel Semiconductor |
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MIC2193 Datasheet(HTML) 8 Page - Micrel Semiconductor |
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8 / 10 page ![]() MIC2193 Micrel M9999-042704 8 April 2004 MOSFET Selection The P-channel MOSFET must have a V GS threshold voltage equal to or lower than the input voltage when used in a buck converter topology. There is a limit to the maximum gate charge the MIC2193 will drive. MOSFETs with higher gate charge will have slower turn-on and turn-off times. Slower transition times will cause higher power dissipation in the MOSFETs due to higher switching transition losses. The MOSFETs must be able to completely turn on and off within the driver non-overlap time If both MOSFETs are conducting at the same time, shoot-through will occur, which greatly increases power dissipation in the MOSFETs and reduces converter efficiency. The MOSFET gate charge is also limited by power dissipation in the MIC2193. The power dissipated by the gate drive circuitry is calculated below: P GATE_DRIVE = QGATE × VIN × fS where: Q GATE is the total gate charge of both the N and P- channel MOSFETs. f S is the switching frequency V IN is the gate drive voltage The graph in Figure 3 shows the total gate charge that can be driven by the MIC2193 over the input voltage range, for different values of switching frequency. 0 10 20 30 40 50 60 70 80 90 100 02468 10 12 14 INPUT VOLTAGE (V) Max. Gate Charge Figure 3. MIC2193 Frequency vs Max. Gate Charge Oscillator The internal oscillator is free running and requires no external components. The maximum duty cycle is 100%. This is another advantage of using a P-channel MOSFET for the high-side drive: it can continuously turned on. A frequency foldback mode is enabled if the voltage on the feedback pin (pin 3) is less than 0.3V. In frequency foldback, the oscillator frequency is reduced by approximately a factor of 4. Frequency foldback is used to limit the energy delivered to the output during a short circuit fault condition. Voltage Setting Components The MIC2193 requires two resistors to set the output voltage as shown in Figure 4. VREF 1.245V Voltage Amplifier Pin 3 MIC2193 VOUT R1 R2 Figure 4 The output voltage is determined by the equation below. VV R R OUT REF =× + 1 1 2 Where: V REF for the MIC2193 is typically 1.245V. Lower values of R1 are preferred to prevent noise from appearing on the FB pin. A typically recommended value is 10k Ω. If R1 is too small in value it will decrease the efficiency of the power supply, especially at low output loads. Once R1 is selected, R2 can be calculated with the following formula. R VR VV REF OUT REF 2 1 = × – Efficiency Considerations Efficiency is the ratio of output power to input power. The difference is dissipated as heat in the buck converter. Under light output load, the significant contributors are: • The V IN supply current To maximize efficiency at light loads: • Use a low gate charge MOSFET or use the smallest MOSFET, which is still adequate for maximum output current. • Use a ferrite material for the inductor core, which has less core loss than an MPP or iron power core. Under heavy output loads the significant contributors to power loss are (in approximate order of magnitude): • Resistive on time losses in the MOSFETs • Switching transition losses in the high side MOSFET • Inductor resistive losses • Current sense resistor losses • Input capacitor resistive losses (due to the capacitors ESR) To minimize power loss under heavy loads: • Use low on resistance MOSFETs. Use low threshold logic level MOSFETs when the input voltage is below 5V. Multiplying the gate charge by the on resistance gives a figure of merit, providing a good balance between low load and high load efficiency. • Slow transition times and oscillations on the voltage and current waveforms dissipate more power during the turn on and turn off of the MOSFETs. A clean layout will minimize parasitic inductance and capaci- tance in the gate drive and high current paths. This will allow the fastest transition times and waveforms without oscillations. Low gate charge MOSFETs will |
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