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MJD243 Datasheet(PDF) 1 Page - ON Semiconductor |
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MJD243 Datasheet(HTML) 1 Page - ON Semiconductor |
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1 / 8 page ![]() © Semiconductor Components Industries, LLC, 2004 March, 2004 − Rev. 8 1 Publication Order Number: MJD243/D MJD243 (NPN), MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain − hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC = 1.0 Adc • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) • Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.6 Vdc (Max) @ IC = 1.0 Adc • High Current−Gain − Bandwidth Product − fT = 40 MHz (Min) @ IC = 100 mAdc • Annular Construction for Low Leakage − ICBO = 100 nAdc @ Rated VCB • Epoxy Meets UL 94, V−0 @ 0.125 in. • ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V • Pb−Free Package is Available DPAK−3 CASE 369D STYLE 1 4.0 A, 100 V, 12.5 W POWER TRANSISTOR MARKING DIAGRAMS Y = Year WW = Work Week J2x3 = Device Code x = 4 or 5 Device Package Shipping† ORDERING INFORMATION DPAK−3 DPAK−3 CASE 369C STYLE 1 YWW J2x3 Preferred devices are recommended choices for future use and best overall value. MJD243 75 Units/Rail MJD243T4 DPAK−3 2500/Tape & Reel MJD253−1 DPAK−3 75 Units/Rail http://onsemi.com YWW J2x3 MJD253T4 DPAK−3 2500/Tape & Reel 1 2 3 4 1 2 3 Base Collector Emitter 4 MJD243T4G DPAK−3 (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
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