MJD243 datasheet(3/8 Pages) ONSEMI

3 / 8 page

MJD243 (NPN), MJD253 (PNP)

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction−to−Case

Junction−to−Ambient (Note 2)

RqJC

RqJA

89.3

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3) (IC = 10 mAdc, IB = 0)

VCEO(sus)

100

−

Vdc

Collector Cutoff Current (VCB = 100 Vdc, IE = 0)

Collector Cutoff Current (VCB = 100 Vdc, IE = 0, TJ = 125°C)

ICBO

−

100

nAdc

mAdc

Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)

IEBO

−

100

nAdc

DC Current Gain (Note 3) (IC = 200 mAdc, VCE = 1.0 Vdc)

DC Current Gain (Note 3) (IC = 1.0 Adc, VCE = 1.0 Vdc)

hFE

180

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 1.0 Adc, IB = 100 mAdc)

VCE(sat)

−

0.3

0.6

Vdc

Base−Emitter Saturation Voltage (Note 3) (IC = 2.0 Adc, IB = 200 mAdc)

VBE(sat)

−

1.8

Vdc

Base−Emitter On Voltage (Note 3) (IC = 500 mAdc, VCE = 1.0 Vdc)

VBE(on)

−

1.5

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 4)

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

−

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

Cob

−

2. When surface mounted on minimum pad sizes recommended.

3. Pulse Test: Pulse Width = 300

ms, Duty Cycle [ 2%.

4. fT = hFE• ftest.

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