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TUSB8020BPHPR Datasheet(PDF) 7 Page - Texas Instruments

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Part # TUSB8020BPHPR
Description  Two-Port USB 3.0 Hub
PDF  43 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TUSB8020BPHPR Datasheet(HTML) 7 Page - Texas Instruments

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TUSB8020B
www.ti.com
SLLSEF6A – JULY 2014 – REVISED JULY 2014
7 Specifications
7.1 Absolute Maximum Ratings
(1)
over operating free-air temperature (unless otherwise noted)
MIN
MAX
UNIT
VDD
Steady-state supply voltage
–0.3
1.4
V
VDD33
Steady-state supply voltage
–0.3
3.8
V
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 Handling Ratings
MIN
MAX
UNIT
Tstg
Storage temperature range
–65
150
°C
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)
–2000
2000
Electrostatic
V(ESD)
V
discharge
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2)
–500
500
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VDD(1)
1.1-V supply voltage
0.99
1.1
1.26
V
VDD33
3.3-V supply voltage
3
3.3
3.6
V
USB_VBUS
Voltage at USB_VBUS PAD
0
1.155
V
TUSB8020B
0
25
70
TA
Operating free-air temperature range
°C
TUSB8020BI
–40
25
85
TJ
Operating junction temperature range
–40
25
105
°C
(1)
A 1.05-V, 1.1-V, or 1.2-V supply may be used as long as minimum and maximum supply conditions are met.
7.4 Thermal Information
TUSB8020B
THERMAL METRIC(1)
PHP
UNIT
48 PINS
RθJA
Junction-to-ambient thermal resistance(2)
31.8
RθJC(top)
Junction-to-case (top) thermal resistance(3)
16.1
RθJB
Junction-to-board thermal resistance(4)
13
°C/W
ψJT
Junction-to-top characterization parameter(5)
0.5
ψJB
Junction-to-board characterization parameter(6)
12.9
RθJC(bot)
Junction-to-case (bottom) thermal resistance(7)
0.9
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2)
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3)
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-
standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4)
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(5)
The junction-to-top characterization parameter,
ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining
θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6)
The junction-to-board characterization parameter,
ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining
θJA , using a procedure described in JESD51-2a (sections 6 and 7).
(7)
The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
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