MJE18004 datasheet(2/2 Pages) ISC

2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.com

isc & iscsemi is registered trademark

isc Silicon NPN Power Transistor

MJE18004

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 30mA; IB=0

450

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 1 A ;IB= 0.1A

TC=125℃

0.5

0.6

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 2A ;IB= 0.4 A

TC=125℃

0.45

0.8

VCE(sat)-3

Collector-Emitter Saturation Voltage

IC= 2.5A ;IB= 0.5 A

0.75

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 1A; IB= 0.1A

1.1

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 2A; IB= 0.4A

1.25

VBE(sat)-3

Base-Emitter Saturation Voltage

IC= 2.5A; IB= 0.5 A

1.3

ICES

Collector Cutoff Current

VCES= RatedVCES;VEB= 0

TC=125℃

0.05

0.5

VCES= 800V

TC=125℃

0.01

0.1

ICEO

Collector Cutoff Current

VCE= RatedVCEO; IB= 0

0.1

IEBO

Emitter Cutoff Current

VEB= 9V; IC= 0

0.1

hFE-1

DC Current Gain

IC= 1A ; VCE= 5V

hFE-2

DC Current Gain

IC= 2A ; VCE= 1V

hFE-3

DC Current Gain

IC= 10mA; VCE= 5V

Current-Gain—Bandwidth Product

IC= 0.5A;VCE= 10V;ftest=1.0MHz

MHz

COB

Output Capacitance

IE= 0; VCB= 10V; ftest=1.0MHz

450

Switching Times Resistive Load,Duty Cycle≤10%,Pulse Width=20μs

ton

Turn-on Time

VCC=250V ,IC=2.5A

IB1=IB2=0.5 A

450

600

Storage Time

Turn-off Time

0.275

0.4

MJE18004 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

MJE18004 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2

Datasheet Download

Link URL