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MJE18004 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJE18004 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor MJE18004 DESCRIPTION · Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) · High Switching Speed APPLICATIONS · Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 2 A IBM Base Current-Peak 4 A PD Total Power Dissipation@TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Rresistance,Junction to Case 1.25 ℃ /W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃ /W |
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