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ADP3522 Datasheet(PDF) 18 Page - Analog Devices |
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ADP3522 Datasheet(HTML) 18 Page - Analog Devices |
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18 / 20 page ![]() REV. 0 –18– ADP3522 current is programmed by selecting the sense resistor, R1 (see Figure 2). The lithium ion charge current is calculated using I V R mV R CHR SENSE == 1 160 1 (5) where VSENSE is the high current limit threshold voltage. Or if the charge current is known, R1 can be found: R V I mV I SENSE CHR CHR 1 160 == (6) Similarly the trickle charge current and the end of charge cur- rent can be calculated: I V R mV R TRICKLE SENSE == 1 20 1 (7) I V R mV R EOC SENSE == 1 14 1 (8) Example: Assume an 800 mA-H capacity lithium ion battery and a 1 C charge rate. R1 = 200 m . Then ITRICKLE = 100 mA and IEOC = 70 mA. Appropriate sense resistors are available from the following vendors: • Vishay Dale • IRC • Panasonic Charger FET Selection The type and size of the pass transistor is determined by the threshold voltage, input-output voltage differential, and charge current. The selected PMOS must satisfy the physical, electri- cal, and thermal design requirements. To ensure proper operation, the minimum VGS the ADP3522 can provide must be enough to turn on the FET. The available gate drive voltage can be estimated using the following: VV V V GS ADAPTER MIN GATEDR SENSE =- - () (9) where VADAPTER(MIN) is the minimum adapter voltage. VGATEDR is the gate drive “low” voltage, 0.5 V. VSENSE is the maximum high current limit threshold voltage. The difference between the adapter voltage (VADAPTER) and the final battery voltage (VBAT) must exceed the voltage drop due to the blocking diode, the sense resistor, and the on resistance of the FET at maximum charge current. VV V V V DS ADAPTER DIODE SENSE BAT =- - - (10) Then the RDS(ON) of the FET can be calculated: R V I DS ON DS CHR MAX () () = (11) The thermal characteristics of the FET must be considered next. The worst-case dissipation can be determined using: PV V V UVLO I DISS ADAPTER MAX DIODE SENSE CHR =− − −× () (12) It should be noted that the adapter voltage can be either preregulated or nonregulated. In the preregulated case, the difference between the maximum and minimum adapter voltage is probably not significant. In the unregulated case, the adapter voltage can have a wide range specified. However, the maxi- mum voltage specified is usually with no load applied. So, the worst-case power dissipation calculation will often lead to an overspecified pass device. In either case, it is best to determine the load characteristics of the adapter to optimize the charger design. For example: VADAPTER(MIN) = 5.0 V VADAPTER(MAX) = 6.5 V VDIODE = 0.5 V at 800 mA VGATEDR = 0.5 V VSENSE = 160 mV VGS = 5 V – 0.5 V – 0.160 V = 4.3 V. So choose a low threshold voltage FET. VV V V V VV V V V mV DS ADAPTER MIN DIODE SENSE BAT DS =- - - =- - - = () .. . 50 50 160 42 140 (13) R V I mV mA m DS ON DS CHR MAX () () == = 140 800 175 Ω (14) PV V V UVLO I PV V V V AW DISS ADAPTER MAX DIODE SENSE CHR DISS =− − −× =− − − ×= ( ) ( ... . ) .. () 65 05 0160 32 08 21 (15) Appropriate PMOS FETs are available from the following vendors: • Siliconix • IR • Fairchild Charger Diode Selection The diode, D1, shown in Figure 2 is used to prevent the battery from discharging through the PMOS’ body diode into the charger’s internal bias circuits. A Schottky diode is recom- mended to minimize the voltage difference from the charger to the battery and the power dissipation. Choose a diode with a current rating high enough to handle the battery charging cur- rent and a voltage rating greater than VBAT. The blocking diode is required for both lithium and nickel battery types. |
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