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KSD880W Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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KSD880W Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor KSD880W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 300mA 1 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE=5V 1 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 100 μ A IEBO Emitter Cutoff Current VEB= 7V; IC= 0 100 μ A hFE1 DC Current Gain IC= 0.5A; VCE= 5V 60 200 hFE2 DC Current Gain IC= 3A; VCE= 5V 20 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 9 MHz Cob Collector output capacitance VCB=10V ,IE=0,f=1MHz 150 pF hFE-1 Classifications O Y 60-120 100-200 |
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