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BDS12 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDS12 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() NCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor BDS12 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2.5A 2.5 V ICBO Collector Cutoff Current VCE= 100V; VBE= 0 0.5 mA ICEO Collector Cutoff Current VCE= 50V; VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 mA hFE-1 DC Current Gain IC= 0.5A; VCE= 4V 40 250 hFE-2 DC Current Gain IC= 5A; VCE= 4V 15 150 hFE-3 DC Current Gain IC= 10A; VCE= 4V 5 fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 4V 3 MHz |
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