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BDS12 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BDS12
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDS12 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BDS12 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BDS12 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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NCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
BDS12
DESCRIPTION
·
High Voltage: VCEV= 100V(Min)
·
Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 5A
·
High Reliablity
APPLICATIONS
·
Designed for power linear and switching application and
General puepose power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEV
Collector-Emitter Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current
5
A
PC
Collector Power Dissipation
@ TC=25℃
90
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.4
℃
/W
Rth j-a
Thermal Resistance, Junction to Ambient
80
℃
/W


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