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BDX67A Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BDX67A
Description  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDX67A Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BDX67A Datasheet HTML 1Page - Inchange Semiconductor Company Limited BDX67A Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Darlington Power Transistor
BDX67/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX67
IC= 50mA ; L= 25mH
60
V
BDX67A
80
BDX67B
100
BDX67C
120
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 10A; IB= 40mA
2.0
V
VBE(on)
Base-Emitter On Voltage
IC= 10A; VCE= 3V
2.5
V
ICBO
Collector
Cutoff Current
BDX67
VCB= 80V; IE= 0
VCB= 80V; IE= 0; TC=150℃
1.0
5.0
mA
BDX67A
VCB= 100V; IE= 0
VCB= 100V; IE= 0; TC=150℃
1.0
5.0
BDX67B
VCB= 120V; IE= 0
VCB= 120V; IE= 0; TC=150℃
1.0
5.0
BDX67C
VCB= 140V; IE= 0
VCB= 140V; IE= 0; TC=150℃
1.0
5.0
ICEO
Collector Cutoff Current
VCE= 1/2VCEO(Max); IB=0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
5.0
mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 3V
5200
hFE-2
DC Current Gain
IC= 10A ; VCE= 3V
1000
hFE-3
DC Current Gain
IC= 16A ; VCE= 3V
4000
VECF
C-E Diode Forward Voltage
IF= 10A
2.5
V
COB
Output Capacitance
IE= 0 ; VCB= 10V,ftest= 1.0MHz
300
pF



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