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BDX67A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BDX67A
Description  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDX67A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
BDX67/A/B/C
DESCRIPTION
·
High DC Current Gain-
: hFE= 1000(Min)@ IC= 10A
·
Low Saturation Voltage
·
Complement to Type BDX66/A/B/C
APPLICATIONS
·
Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
BDX67
80
V
BDX67A
100
BDX67B
120
BDX67C
140
VCEO
Collector-Emitter Voltage
BDX67
60
V
BDX67A
80
BDX67B
100
BDX67C
120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
16
A
ICM
Collector Current-Peak
20
A
IB
Base Current
250
mA
PC
Collector Power Dissipation
@ TC=25℃
150
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.17
℃
/W


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