SA8027 datasheet(7/22 Pages) PHILIPS

7 / 22 page

Philips Semiconductors

Product data

SA8027

2.5 GHz low voltage, low power

RF fractional-N/IF integer frequency synthesizer

2001 Aug 21

CHARACTERISTICS (continued)

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Phase noise (condition RSET = 7.5 kΩ, CP = 00)

Synthesizer’s contribution to close-in phase noise

of 900 MHz RF signal at 1 kHz offset.

GSM

fREF = 13MHz, TCXO,

–

–90

–

dBc/Hz

Synthesizer’s contribution to close-in phase noise

of 1800 MHz RF signal at 1 kHz offset.

fREF = 13MHz, TCXO,

fCOMP = 1MHz

indicative, not tested

–

–83

–

dBc/Hz

(f)

Synthesizer’s contribution to close-in phase noise

of 800 MHz RF signal at 1 kHz offset.

TDMA

fREF = 19.44MHz, TCXO,

–

–85

–

dBc/Hz

Synthesizer’s contribution to close-in phase noise

of 2100 MHz RF signal at 1 kHz offset.

fREF = 19.44MHz, TCXO,

fCOMP = 240kHz

indicative, not tested

–

–77

–

dBc/Hz

Interface logic input signal levels

VIH

HIGH level input voltage

0.7*VDD

–

VDD+0.3

VIL

LOW level input voltage

–0.3

–

0.3*VDD

ILEAK

Input leakage current

logic 1 or logic 0

–0.5

–

+0.5

µA

Lock detect output signal (in push/pull mode)

VOL

LOW level output voltage

Isink = 2 mA

–

0.4

VOH

HIGH level output voltage

Isource = –2 mA

VDD–0.4

–

NOTES:

1. ISET +

SET

bias current for charge pumps

2. The relative output current variation is defined as:

OUT

+ 2

2 * I1)

2 ) I1|

; with I

1 @V1 + 0.6 V, I2 @V2 + VDDCP –0.7 V (See Figure 5.)

CURRENT

VPH

SR00602

IZOUT

VOLTAGE

Figure 5.

Relative Output Current Variation

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