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ML610Q419C Datasheet(PDF) 22 Page - LAPIS Semiconductor Co., Ltd. |
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ML610Q419C Datasheet(HTML) 22 Page - LAPIS Semiconductor Co., Ltd. |
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22 / 38 page ![]() FEDL610Q419-07 ML610Q419/ML610Q419C 22/38 CLOCK GENERATION CIRCUIT OPERATING CONDITIONS (VSS = 0V) Parameter Symbol Condition Rating Unit Min. Typ. Max. Low-speed crystal oscillation frequency fXTL 32.768k Hz Recommended equivalent series resistance value of low-speed crystal oscillation RL 40k Ω Low-speed crystal oscillation external capacitor CDL/CGL CL=3pF of crystal oscillation 6 pF CL=6pF of crystal oscillation 12 CL=9pF of crystal oscillation 18 High-speed crystal/ceramic oscillation frequency fXTH 4.0M / 4.096M Hz High-speed crystal oscillation external capacitor CDH 24 pF CGH 24 OPERATING CONDITIONS OF FLASH ROM (VSS = 0V) Parameter Symbol Condition Rating Unit Min. Typ. Max. Operating temperature TOP Flash ROM, At write/erase 0 +40 °C Data flash memory, At write/erase -40 +85 °C Operating voltage VDD At write/erase 1.8 3.6 V Rewrite counts CEP Flash ROM 100 cycles Data flash memory 10k Data retention YDR Flash ROM 10 years Data flash memory, 1000 cycles 10 Chip-erase time tCERASE 85 100 ms Block-erase time tBERASE 85 100 ms Sector-erase time tSERASE 85 100 ms 1-word (16 bits) write time tWRITE 18 40 µs |
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