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BFP720 Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # BFP720
Description  Low Noise Silicon Germanium Bipolar RF Transistor
PDF  25 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP720 Datasheet(HTML) 7 Page - Infineon Technologies AG

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BFP720
Product Brief
Data Sheet
7
Revision 1.1, 2012-10-19
1
Product Brief
The BFP720 is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable
high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports
voltages up to VCEO = 4 V and currents up to IC = 25 mA. The device is especially suited for mobile applications in
which low power consumption is a key requirement. The typical transition frequency is approximately 45 GHz,
hence the device offers high power gain at frequencies up to 12 GHz in amplifier applications. The device is
housed in an easy to use plastic package with visible leads.



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